A Survey Addressing on High Performance On-Chip VLSI Interconnect

With the rapid increase in transmission speeds of communication systems, the demand for very high-speed lowpower VLSI circuits is on the rise. Although the performance of CMOS technologies improves notably with scaling, conventional CMOS circuits cannot simultaneously satisfy the speed and power requirements of these applications. In this paper we survey the state of the art of on-chip interconnect techniques for improving performance, power and delay optimization and also comparative analysis of various techniques for high speed design have been discussed

A Survey Addressing on High Performance On-Chip VLSI Interconnect

With the rapid increase in transmission speeds of communication systems, the demand for very high-speed lowpower VLSI circuits is on the rise. Although the performance of CMOS technologies improves notably with scaling, conventional CMOS circuits cannot simultaneously satisfy the speed and power requirements of these applications. In this paper we survey the state of the art of on-chip interconnect techniques for improving performance, power and delay optimization and also comparative analysis of various techniques for high speed design have been discussed

High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films

High thermal conductivity materials show promise for thermal mitigation and heat removal in devices. However, shrinking the length scales of these materials often leads to significant reductions in thermal conductivities, thus invalidating their applicability to functional devices. In this work, we report on high in-plane thermal conductivities of 3.05, 3.75, and 6 μm thick aluminum nitride (AlN) films measured via steady-state thermoreflectance. At room temperature, the AlN films possess an in-plane thermal conductivity of ∼260 ± 40 W m–1 K–1, one of the highest reported to date for any thin film material of equivalent thickness. At low temperatures, the in-plane thermal conductivities of the AlN films surpass even those of diamond thin films. Phonon–phonon scattering drives the in-plane thermal transport of these AlN thin films, leading to an increase in thermal conductivity as temperature decreases. This is opposite of what is observed in traditional high thermal conductivity thin films, where boundaries and defects that arise from film growth cause a thermal conductivity reduction with decreasing temperature. This study provides insight into the interplay among boundary, defect, and phonon–phonon scattering that drives the high in-plane thermal conductivity of the AlN thin films and demonstrates that these AlN films are promising materials for heat spreaders in electronic devices